Datasheet4U Logo Datasheet4U.com

HAT1029R Datasheet Silicon P-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT1029R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-522 (Z) 1st.

Key Features

  • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1029R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 20 ±10.
  • 3.5.
  • 28.
  • 3.5 Unit V V A A A.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HAT1020R Silicon P-Channel Power MOSFET
HAT1021R Silicon P-Channel Power MOSFET
HAT1023R Silicon P-Channel Power MOSFET
HAT1024R Silicon P-Channel Power MOSFET
HAT1025R Silicon P-Channel Power MOSFET
HAT1026R Silicon P-Channel Power MOSFET
HAT1016R Silicon P-Channel Power MOSFET
HAT1031T Silicon P-Channel Power MOSFET
HAT1033T Silicon P-Channel Power MOSFET
HAT1036R Silicon P-Channel Power MOSFET

HAT1029R Distributor