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HAT2019R Datasheet Silicon N-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-481 D (Z) 5th.

HAT2019R datasheet preview

Datasheet Details

Part number	HAT2019R
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	50.15 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2019R_HitachiSemiconductor.pdf

Key Features

Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP.
8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2019R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I.

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