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HB56D473EJ-6 Datasheet High Density Dynamic RAM Module

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HB56D473EJ Series 4,194,304-word × 72-bit High Density Dynamic RAM Module ADE-203-725A (Z) Rev. 1.0 Feb.

Download the HB56D473EJ-6 datasheet PDF. This datasheet also includes the HB56D473EJ variant, as both parts are published together in a single manufacturer document.

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General Description

The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

The HB56D473EJ is a 4M × 72 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package, 1 pieces of 16bit BiCMOS line driver (74ABT16244) sealed in TSSOP package and 1 pieces of 20-bit BiCMOS line driver (74ABT16827) sealed in TSSOP package.

An outline of the HB56D473EJ is 168-pin socket type package (dual lead out).

Key Features

  • 168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Lead pitch: 1.27 mm.
  • Single 5 V (±5%) supply.
  • High speed  Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max).
  • Low power dissipation  Active mode: 12.5/11.3 W (max)  Standby mode (TTL): 588 mW (max) (CMOS): 462 mW (max).
  • Buffered input except RAS and DQ.
  • 4 byte interleave enabled, dual address input (A0/B0).

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