HB56D473EJ-6 - High Density Dynamic RAM Module

This page provides the datasheet information for the HB56D473EJ-6, a member of the HB56D473EJ High Density Dynamic RAM Module family.

Product Overview

Hitachi Semiconductor

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Datasheet Details

Part number	HB56D473EJ-6
Manufacturer	Hitachi Semiconductor
File Size	333.28 KB
Description	High Density Dynamic RAM Module
Datasheet	HB56D473EJ-6 Datasheet
Additional preview pages of the HB56D473EJ-6 datasheet.

HB56D473EJ-6 Product details

Description

The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

Features

168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Lead pitch: 1.27 mm.
Single 5 V (±5%) supply.
High speed  Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max).
Low power dissipation  Active mode: 12.5/11.3 W (max)  Standby mode (TTL): 588 mW (max) (CMOS): 462 mW (max).
Buffered input except RAS and DQ.
4 byte interleave enabled, dual address input (A0/B0).

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Published: Oct 10, 2015 |