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HB56D473EJ-7 Datasheet

Manufacturer: Hitachi Semiconductor (now Renesas)

This datasheet includes multiple variants, all published together in a single manufacturer document.

HB56D473EJ-7 datasheet preview

Datasheet Details

Part number HB56D473EJ-7
Datasheet HB56D473EJ-7 HB56D473EJ Datasheet (PDF)
File Size 333.28 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description High Density Dynamic RAM Module
HB56D473EJ-7 page 2 HB56D473EJ-7 page 3

HB56D473EJ-7 Overview

The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. An outline of the HB56D473EJ is 168-pin socket type package (dual lead out). Therefore, the HB56D473EJ makes high density mounting possible without surface mount technology.

HB56D473EJ-7 Key Features

  • 168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Le
  • Single 5 V (±5%) supply
  • High speed
  • Low power dissipation  Active mode: 12.5/11.3 W (max)  Standby mode (TTL): 588 mW (max) (CMOS): 462 mW (max)
  • Buffered input except RAS and DQ
  • 4 byte interleave enabled, dual address input (A0/B0)
  • JEDEC standard outline buffered 8-byte DIMM
  • Fast page mode capability
  • 2,048 refresh cycles: 32 ms
  • 2 variations of refresh  RAS-only refresh  CAS-before-RAS refresh
Hitachi Semiconductor (now Renesas) logo - Manufacturer

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