HD74HCT1G04 - High speed CMOS inverter using silicon gate CMOS process

Product Overview

Hitachi Semiconductor

Part number	HD74HCT1G04
Manufacturer	Hitachi Semiconductor
File Size	67.13 KB
Description	High speed CMOS inverter using silicon gate CMOS process
Datasheet	HD74HCT1G04 Datasheet
Additional preview pages of the HD74HCT1G04 datasheet.

The HD74HCT1G04 is high speed CMOS inverter using silicon gate CMOS process.

TTL series.

The internal circuit of three stages construction with buffer provides wide noise margin and stable output.

The basic gate function is lined up as hitachi uni logic series.
Supplied on emboss taping for high speed automatic mounting.
TTL compatible input level. Supply voltage range : 4.5 to 5.5 V Operating temperature range :.
40 to +85°C.
|IOH| = IOL = 2 mA (min) Outline and Article Indication.
HD74HCT1G04 Index band Marking F 5 CMPAK.
5 = Control code ( or blank) HD74HCT1G04 Function Table Input A H L H : High level L : Low level O.

HD74HCT1G00 - 2-input NAND Gate (Renesas Technology)
HD74HCT1G08 - 2-input AND Gate (Renesas Technology)
HD74HCT1G32 - High Speed CMOS two input OR gate Using Silicon Gate CMOS Process (Renesas Technology)
HD74HCT1G66 - Analog Switch (Renesas Technology)
HD74HCT238 - 3-to-8-line Decoder/Demultiplexer (Renesas)
HD74HC00 - Quad. 2-input NAND Gates (Renesas)
HD74HC01 - Quad. 2-input NAND Gates (Renesas)
HD74HC02 - Quad. 2-input NOR Gates (Renesas)
HD74HC04 - Hex Inverters (Renesas)
HD74HC05 - Hex Inverters (Renesas)

Other Datasheets by Hitachi Semiconductor

Published: Apr 6, 2007 |