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HD74HCT533 - Octal D-type Transparent Latches(with inverted 3-state outputs)

General Description

When the latch enable input is high, the Q outputs of HD74HCT373 will follow the D inputs and the Q outputs of HD74HCT533 will follow the inversion of the D inputs.

When the latch enable goes low, data at the D inputs will be retained at the outputs until latch enable returns high again.

Key Features

  • LSTTL Output Logic Level Compatibility as well as CMOS Output Compatibility High Speed Operation: tpd (Data to Q) = 14 ns typ (CL = 50 pF) High Output Current: Fanout of 15 LSTTL Loads Wide Operating Voltage: VCC = 4.5 to 5.5 V Low Input Current: 1 µA max Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = 25°C) Function Table Output Control L L L H X : Z : Enable G H H L X D H L X X HD74HCT373 Q H L No change Z HD74HCT533 Q L.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HD74HCT534 Octal D-type Flip-Flops(with inverted 3-state outputs)
HD74HCT540 Octal Buffers/Line Drivers (with 3-state outputs)
HD74HCT541 Octal Buffers/Line Drivers (with 3-state outputs)
HD74HCT563 Octal Transparent Latches (with 3-state outputs)
HD74HCT564 Octal D-type Flip-Flops (with 3-state outputs)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HD74HCT373/HD74HCT533 Octal D-type Transparent Latches (with 3-state outputs)/ Octal D-type Transparent Latches (with inverted 3-state outputs) Description When the latch enable input is high, the Q outputs of HD74HCT373 will follow the D inputs and the Q outputs of HD74HCT533 will follow the inversion of the D inputs. When the latch enable goes low, data at the D inputs will be retained at the outputs until latch enable returns high again. When a high logic level is applied to the output control input, all outputs go to a high impedance state, regardless of what signals present at the other inputs and the state of the storage elements.