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HM624100H - 4M High Speed SRAM (1-Mword x 4-bit)

Description

The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0 V supply : 5.0 V ± 10 %.
  • Access time 10/12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current : 200/180/160 mA (max).
  • TTL standby current : 70/60/50 mA (max).
  • CMOS standby ccurrent : 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current : 0.8 mA (max) (L-version).
  • Da.

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HM624100HC 4M High Speed SRAM (1-Mword x 4-bit)
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Full PDF Text Transcription

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HM624100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.
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