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HM624100HC - 4M High Speed SRAM (1-Mword x 4-bit)

Description

The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0 V supply : 5.0 V ± 10 %.
  • Access time 10 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current : 140 mA (max).
  • TTL standby current : 40 mA (max).
  • CMOS standby ccurrent : 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current : 0.8 mA (max) (L-version).
  • Data retension voltage.

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HM624100H 4M High Speed SRAM (1-Mword x 4-bit)
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Full PDF Text Transcription

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HM624100HC Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100HC is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.
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