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HM624100HC

Manufacturer: Hitachi Semiconductor (now Renesas)
HM624100HC datasheet preview

Datasheet Details

Part number HM624100HC
Datasheet HM624100HC_HitachiSemiconductor.pdf
File Size 65.18 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 4M High Speed SRAM (1-Mword x 4-bit)
HM624100HC page 2 HM624100HC page 3

HM624100HC Overview

The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.

HM624100HC Key Features

  • Single 5.0 V supply : 5.0 V ± 10 %
  • Access time 10 ns (max)
  • pletely static memory  No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL patible  All inputs and outputs
  • Operating current : 140 mA (max)
  • TTL standby current : 40 mA (max)
  • CMOS standby ccurrent : 5 mA (max) : 1.2 mA (max) (L-version)
  • Data retension current : 0.8 mA (max) (L-version)
  • Data retension voltage : 2.0 V (min) (L-version)
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HM624100HC Distributor

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