• Part: HM62V8512B
  • Description: 4 M SRAM (512-kword x 8-bit)
  • Manufacturer: Hitachi Semiconductor
  • Size: 77.62 KB
Download HM62V8512B Datasheet PDF
HM62V8512B page 2
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HM62V8512B page 3
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HM62V8512B Key Features

  • Single 3.0 V supply: 2.7 V to 3.6 V
  • Access time: 70/85 ns (max)
  • Power dissipation  Active: 15 mW/MHz (typ)  Standby: 3 µW (typ)
  • pletely static memory. No clock or timing strobe required
  • Equal access and cycle times
  • mon data input and output: Three state output
  • Directly LV-TTL patible: All inputs
  • Battery backup operation
  • Memory Matrix 1,024 × 4,096 V CC V SS
  • CS WE OE Timing Pulse Generator Read/Write Control