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HM62V8512B - 4 M SRAM (512-kword x 8-bit)

General Description

The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit.

It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.

Key Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Access time: 70/85 ns (max).
  • Power dissipation  Active: 15 mW/MHz (typ)  Standby: 3 µW (typ).
  • Completely static memory. No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output: Three state output.
  • Directly LV-TTL compatible: All inputs.
  • Battery backup operation HM62V8512B Series Ordering Information Type No. HM62V8512BLFP-7 HM62V8512BLFP-8 HM62V8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM62V8512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-905G (Z) Rev. 6.0 Mar. 31, 2000 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512B is suitable for battery backup system. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Access time: 70/85 ns (max) • Power dissipation  Active: 15 mW/MHz (typ)  Standby: 3 µW (typ) • Completely static memory.