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HM62V8512CI Datasheet

Manufacturer: Hitachi Semiconductor (now Renesas)
HM62V8512CI datasheet preview

HM62V8512CI Details

Part number HM62V8512CI
Datasheet HM62V8512CI_HitachiSemiconductor.pdf
File Size 57.45 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description Wide Temperature Range Version4 M SRAM (512-kword x 8-bit)
HM62V8512CI page 2 HM62V8512CI page 3

HM62V8512CI Overview

The Hitachi HM62V8512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62V8512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM62V8512CI Series offers low power standby power dissipation;.

HM62V8512CI Key Features

  • Single 3.0 V supply: 2.7 V to 3.6 V
  • Access time: 70 ns (max)
  • Power dissipation  Active: 6.0 mW/MHz (typ)  Standby: 2.4 µW (typ)
  • pletely static memory. No clock or timing strobe required
  • Equal access and cycle times
  • mon data input and output: Three state output
  • Directly LV-TTL patible: All inputs and outputs
  • Battery backup operation
  • Operating temperature: -40 to +85˚C
  • CS WE OE Timing Pulse Generator Read/Write Control

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