HN58C1001 Key Features
- Single supply: 5.0 V ± 10%
- Access time: 150 ns (max)
- Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 µW (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 10 ms (max)
- Automatic page write (128 bytes): 10 ms (max)
- Data polling and RDY/Busy
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard
- Reliable CMOS with MNOS cell technology