HN58S256A Key Features
- Single supply: 2.2 to 3.6 V
- Access time: 150 ns (max)/200 ns (max)
- Power dissipation: Active: 10 mW/MHz, (typ) Standby: 36 µW (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 15 ms (max)
- Automatic page write (64 bytes): 15 ms (max)
- Data polling and Toggle bit
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard
- Reliable CMOS with MNOS cell technology