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HN58S256A

Manufacturer: Hitachi Semiconductor (now Renesas)

HN58S256A datasheet by Hitachi Semiconductor (now Renesas).

HN58S256A datasheet preview

HN58S256A Datasheet Details

Part number HN58S256A
Datasheet HN58S256A_HitachiSemiconductor.pdf
File Size 88.41 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 256 k EEPROM (32-kword x 8-bit)
HN58S256A page 2 HN58S256A page 3

HN58S256A Overview

The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster.

HN58S256A Key Features

  • Single supply: 2.2 to 3.6 V
  • Access time: 150 ns (max)/200 ns (max)
  • Power dissipation:  Active: 10 mW/MHz, (typ)  Standby: 36 µW (max)
  • On-chip latches: address, data, CE, OE, WE
  • Automatic byte write: 15 ms (max)
  • Automatic page write (64 bytes): 15 ms (max)
  • Data polling and Toggle bit
  • Data protection circuit on power on/off
  • Conforms to JEDEC byte-wide standard
  • Reliable CMOS with MNOS cell technology
Hitachi Semiconductor (now Renesas) logo - Manufacturer

More Datasheets from Hitachi Semiconductor (now Renesas)

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HN58C256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function
HN58C65 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
HN58V1001 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
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HN58V65A 64k EEPROM (8-kword x 8-bit) Ready/Busy function
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HN58S256A Distributor

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