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HN58V1001

Manufacturer: Hitachi Semiconductor (now Renesas)

HN58V1001 datasheet by Hitachi Semiconductor (now Renesas).

HN58V1001 datasheet preview

HN58V1001 Datasheet Details

Part number HN58V1001
Datasheet HN58V1001_HitachiSemiconductor.pdf
File Size 119.74 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V1001 page 2 HN58V1001 page 3

HN58V1001 Overview

The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

HN58V1001 Key Features

  • Single 3 V supply: 2.7 V to 5.5 V
  • Access time: 250 ns (max)
  • Power dissipation  Active: 20 mW/MHz, (typ)  Standby: 110 µW (max)
  • On-chip latches: address, data, CE, OE, WE
  • Automatic byte write: 15 ms (max)
  • Automatic page write (128 bytes): 15 ms (max)
  • Data polling and RDY/Busy
  • Data protection circuit on power on/off
  • Conforms to JEDEC byte-wide standard
  • Reliable CMOS with MNOS cell technology
Hitachi Semiconductor (now Renesas) logo - Manufacturer

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