HN58V1001 Key Features
- Single 3 V supply: 2.7 V to 5.5 V
- Access time: 250 ns (max)
- Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 µW (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 15 ms (max)
- Automatic page write (128 bytes): 15 ms (max)
- Data polling and RDY/Busy
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard
- Reliable CMOS with MNOS cell technology