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HN58V65A - 64k EEPROM (8-kword x 8-bit) Ready/Busy function

General Description

The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit.

They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology.

Key Features

  • Single supply: 2.7 to 5.5 V.
  • Access time:  100 ns (max) at 2.7 V ≤ VCC < 4.5 V  70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V.
  • Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 µW (max).
  • On-chip latches: address, data, CE, OE, WE.
  • Automatic byte write: 10 ms (max).
  • Automatic page write (64 bytes): 10 ms (max).
  • Ready/Busy.
  • Data polling and Toggle bit.
  • Data protection circuit on power on/off.
  • Conforms to JE.

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📁 Similar Datasheet

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HN58V1001 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function
HN58C1001 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58C256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function
HN58C65 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HN58V65A Series HN58V66A Series 64 k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) ADE-203-539B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features • Single supply: 2.7 to 5.5 V • Access time:  100 ns (max) at 2.7 V ≤ VCC < 4.5 V  70 ns (max) at 4.5 V ≤ VCC ≤ 5.