HSM126S
HSM126S is Silicon Schottky Barrier Diode for System Protection manufactured by Hitachi Semiconductor.
Features
- HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and
- surge.
- Low VF and low leakage current.
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM126S Laser Mark S14 Package Code MPAK
Pin Arrangement
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)- 3
Item Repetitive peak reverse voltage Average forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Sine wave, Two device total 2. 50Hz half sine wave 1 pulse 3. Per one device Symbol VRRM I O-
1 2
Value 20 200 2 125
- 55 to +125
Unit V m A A °C °C
I FSM
- Tj Tstg
Electrical Characteristics (Ta = 25°C)-
Item Reverse current Forward voltage Capacitance Note: Per one device Symbol IR VF C Min
- -
- Typ
- - 40 Max 2.0 0.35
- Unit µA V p F Test Condition VR = 5V I F = 10m A VR = 0V, f = 1MHz
10 Pulse test 1.0 Forward current I F (A)
- 1
Ta = 75°C 10
- 2
Ta = 25°C 10
- 3
- 4
- 5
0.6 0.8 0.2 0.4 Forward voltage VF...
