Download HSM198S Datasheet PDF
Hitachi Semiconductor
HSM198S
HSM198S is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features - - - - Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM198S Laser Mark C6 Package Code MPAK Pin Arrangement (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Two device total Symbol VR I O- Tj Tstg Value 10 30 125 - 55 to +125 Unit V m A °C °C Electrical Characteristics (Ta = 25°C)- 1 Item Forward voltage Reverse current Forward current Capacitance Capacitance deviation Rectifier efficiency ESD Capability Symbol VF IR IF C ∆V F η - Min - - 4.5 - - 70 30 Typ - - - - - - - Max 1.1 70 - 1.5 10 - - Unit V µA m A p F m V % V Test Condition I F = 5m A VR = 6V VF = 1V VR = 1V, f = 1MHz I F = 5m A Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20p F - 2C = 200p F, Both forward and reverse direction 1 pulse Notes: 1. Per one device 2. Failure Criterrion; IR ≥ 140 µA at VR = 6V - 2 10 Forward current I F (A) - 3 - 4 - 5 - 6 0.4 0.6 0.8 0.2 Forward voltage VF (V) Fig.1 Forward current Vs. Forward...