• Part: HSM88AS
  • Description: Silicon Schottky Barrier Diode for Balanced Mixer
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 28.64 KB
Download HSM88AS Datasheet PDF
Hitachi Semiconductor
HSM88AS
HSM88AS is Silicon Schottky Barrier Diode for Balanced Mixer manufactured by Hitachi Semiconductor.
Features - Proof against high voltage. - MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88AS Laser Mark C1 Package Code MPAK Outline (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO - 1 Value 10 15 125 - 55 to +125 Unit V m A °C °C Tj Tstg Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability - 1 Typ - - - - - - - - Max 420 580 0.2 10 0.85 0.10 10 - Unit m V µA Test Condition I F = 1 m A I F = 10 m A VR = 2V VR = 10V 350 500 - - - - - 30 C ∆C ∆ VF - p F p F m V V VR = 0V, f = 1 MHz VR = 0V, f = 1 MHz I F = 10 m A C=200p F , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 400n A at VR =2 V Main Characteristic 10-2...