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2SC5470 - Silicon NPN Triple Diffused Planar Transistor

Key Features

  • High breakdown voltage VCBO = 1500 V.
  • High speed switching tf = 0.15 µsec(typ. ) at fH=64kHz Outline TO.
  • 3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25° C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 R.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25° C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 700 6 20 40 150 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Symbol V(BR)CEO Min 700 6 — 10 3.