2SC5470 - Silicon NPN Triple Diffused Planar Transistor

Product Overview

Hitachi

Part number	2SC5470
Manufacturer	Hitachi
File Size	34.80 KB
Description	Silicon NPN Triple Diffused Planar Transistor
Datasheet	2SC5470 Datasheet
Additional preview pages of the 2SC5470 datasheet.

High breakdown voltage VCBO = 1500 V.
High speed switching tf = 0.15 µsec(typ. ) at fH=64kHz Outline TO.
3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25° C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 R.

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Published: Sep 14, 2005 |