HZM68FA
HZM68FA is Silicon Epitaxial Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features
- HZM6.8FA has four devices, and can absorb external + and -surge.
- MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8FA Laser Mark 68A Package Code MPAK-5
Outline
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM6.8FA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
- 1
Value 200 150 -55 to +150
Unit m W °C °C
1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C)
- 1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability Symbol VZ IR C rd
- Min 6.47
- -
- 30 Typ
- -
- -
- Max 7.0 2 130 30
- Unit V µA p F Ω k V Test Condition I Z = 5 m A, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse
- 2
Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5V.
HZM6.8FA
Main Characteristic
-3
10-4 (A) Iz Zener Current 10
-5
10 -6 10...
