• Part: HZM68MFA
  • Description: Silicon Planar Zener Diode for Surge Absorb
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 24.65 KB
Download HZM68MFA Datasheet PDF
Hitachi Semiconductor
HZM68MFA
HZM68MFA is Silicon Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features - HZM6.8MFA has four devices in a monolithic, and can absorb surge. - MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.8MFA Laser Mark 68M Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM6.8MFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg - 1 Value 200 150 -55 to +150 Unit m W °C °C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) - 1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability - 2 Symbol VZ IR C rd - Min 6.47 - - - 30 Typ - - - - - Max 7.00 2 130 30 - Unit V µA p F Ω k V Test Condition I Z = 5 m A, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5V. HZM6.8MFA Main Characteristic 10 -1 10 10 (A) 10 10 Zener Current 10...