HZM68ZWA
HZM68ZWA is Silicon Epitaxial Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features
- HZM6.8ZWA has two devices, and can absorb external + and -surge.
- Low capacitance (C=25p F max) and can protect ESD of signal line.
- MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8ZWA Laser Mark 68Z Package Code MPAK
Outline
(Top View)
1 Cathode 2 Cathode 3 Anode
HZM6.8ZWA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
- 1
Value 200 150 -55 to +150
Unit m W °C °C
1. Two device total, See Fig.2.
Electrical Characteristics (Ta = 25°C)
- 1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
- 2
Symbol VZ IR C rd
Min 6.47 20
Typ
Max 7.00 2 25 30
Unit V µA p F Ω k V
Test Condition I Z = 5 m A, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5V.
HZM6.8ZWA
Main Characteristic
10 -2
1.0mm
Power Dissipation Pd (m...
