HZM68ZMFA
HZM68ZMFA is Silicon Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features
- HZM6.8ZMFA has four devices in a monolithic, and can absorb surge.
- Low capacitance (C=25p F max) and can protect ESD of signal line.
- MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8ZMFA Laser Mark 68N Package Code MPAK-5
Outline
1 2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM6.8ZMFA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
- 1
Value 200 150 -55 to +150
Unit m W °C °C
1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25°C)
- 1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
- 2
- 3
Symbol VZ IR C rd
- Min 6.47
- -
- 25
Typ
- -
- -
- Max 7.00 2 25 30
- Unit V µA p F Ω k V
Test Condition I Z = 5 m A, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at V R = 3.5V. 3. Between cathode and anode.
HZM6.8ZMFA
Main Characteristic
-2...
