Hitachi MBM500E33E2-R
Silicon N-channel IGBT
| Part No. | MBM500E33E2-R |
|---|---|
| Datasheet | MBM500E33E2-R Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-channel IGBT |
| Buy | Stock & Price |
FEATURES
Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate. Low noise recovery: Ultra soft fast recovery diode. High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plate/AlN substrateABSOLUTE MAXIMUM RATINGS
(Tc=25oC ) Item Symbol Unit MBM500E33E2-R Collector Emitter Voltage Gate Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Operating Junction Temperature Maximum Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals (M4/M8) Mounting (M6) VCES VGES IC ICp IF IFM Tvj,op Tvj,max Tstg VISO - V V A A °C °C °C VRMS N●m 3,300 20 500 (Tc=95 oC) 1,000 500 1,000 -40 ~ +150 175 (1) -55 ~ +125 6,000(AC 1 minute) 2/15 (2) 6 (3) Notes: (1) Only static operation is applicable. Please refer to LD-ES-130737. (2) Recommended Value 1.80.2/15+0-3N●m (3) Recommended Value 5.50.5N●mELECTRICAL CHARACTERISTICS
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