MBM500E33E2-R - Silicon N-channel IGBT

Features

 Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.  Low noise recovery: Ultra soft fast recovery diode.  High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plate/AlN substrate.

Hitachi

Datasheet Details

Part number	MBM500E33E2-R
Manufacturer	Hitachi
File Size	556.83 KB
Description	Silicon N-channel IGBT
Datasheet	MBM500E33E2-R Datasheet
Additional preview pages of the MBM500E33E2-R datasheet.

📁 Similar Datasheet

MBM100422 - ECL RAM (Fujitsu)
MBM100422A-7 - ECL RAM (Fujitsu)
MBM100470 - ECL RAM (Fujitsu)
MBM100474-15 - ECL RAM (Fujitsu)
MBM10415AH - ECL RAM (Fujitsu)
MBM10422 - ECL RAM (Fujitsu)
MBM10422A-7 - ECL RAM (Fujitsu)
MBM10470A-20 - ECL RAM (Fujitsu)
MBM10474 - ECL RAM (Fujitsu)
MBM10474A-15 - ECL RAM (Fujitsu)

Other Datasheets by Hitachi

MBM200GR12 - IGBT POWER MODULE
MBM200GR6 - IGBT POWER MODULE
MBM200GS12AW - IGBT POWER MODULE
MBM200GS6AW - IGBT POWER MODULE
MBM200JS12AW - IGBT POWER MODULE
MBM200JS12EW - IGBT POWER MODULE
MBM300GS12AW - IGBT Module Silicon N-Channel IGBT
MBM400E33D-MFR - IGBT MODULE

Full PDF Text Transcription

Click to expand full text

IGBT MODULE MBM500E33E2-R Silicon N-channel IGBT 3300V E2 version Spec.No.IGBT-SP-14005 R0 P1 FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.  Low noise recovery: Ultra soft fast recovery diode.

Published: Jul 13, 2016 |