1SS118
1SS118 is Silicon Epitaxial Planar Diode manufactured by Hitachi Semiconductor.
Features
- High average forward current. (I O = 200m A)
- High reliability with glass seal.
Ordering Information
Type No. 1SS118 Cathode band Black Mark S118 Package Code DO-35
Outline
S1 18
Type No. Cathode band 1. Cathode 2. Anode
..
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Value at duration of 1µs Symbol VRM VR I FM I FSM
- IO Pd Tj Tstg Value 75 50 600 4 200 500 175
- 65 to +175 Unit V V m A A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min
- -
- - Typ
- -
- - Max 1.0 0.1 3.5 3.0 Unit V µA p F ns Test Condition I F = 10m A VR = 50V VR = 0V, f = 1MHz I F = 10m A, VR = 6V, Irr = 0.1IR , RL = 50Ω
..
- 1
Forward current I F (A)
- 2
- 3
- 4
Ta = 125 °C Ta = 75°C Ta = 25°C Ta =
- 25 ° C
0.8 0.4 0.6 1.0 Forward voltage VF (V)
Fig.1 Forward current Vs. Forward voltage
- 4
Reverse current I R...
