2SH30 Datasheet | Hitachi Semiconductor

Features - High speed switching - Low on-voltage Outline TO- 3P 1. Gate 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 50 100 100 150 - 55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min - - 6.0 - - - - - - Typ - - - 2.1 2800 280 430 300 650 Max 250 ±1 8.0 2.6 - - - 600 1300 Unit µA µA V V p F ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ± 20 V, VCE = 0 I C = 50 m A, VCE = 10V I C = 50 A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz I C = 50 A RL = 6 Ω VGS = ±15V Rg = 50 Ω Gate to emitter cutoff voltage VGE(off) Collector to emitter saturation VCE(sat) voltage Input capacitance Switching time Cies tr t on tf t off Main Characteristics Power vs. Temperature Derating 160 Pch (W) I C (A) 100 30 10 1 m Maximum Safe Operation Area 0µ s Channel Dissipation Collector Current 3 1 0.3 0.1 0.03 Ta = 25 °C 1 DC Op s PW = ot) sh (1 ms °C) 10 25 er ati...