Download 2SJ247 Datasheet PDF
Hitachi Semiconductor
2SJ247
2SJ247 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220AB 3 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 100 ±20 - 8 - 32 - 8 40 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS - 100 ±20 - - - 1.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0 - - - - - - - - - Typ - - - - - 0.25 0.3 5.5 880 325 80 12 47 150 75 - 1.0 170 Max - - ±10 - 250 - 2.0 0.3 0.45 - - - - - - - -...