2SJ350
2SJ350 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
Outline
TO-220FM
2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg
2 1
Ratings
- 120 ±20
- 6
- 12
- 6 20 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS
- 120 ±20
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- 1.0
- - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0
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- Typ
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- 0.5 0.7 5.0 900 265 65 11 45 170 80
- 1.2 240 Max
- - ±10
- 250
- 2.0 0.7 0.9
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