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2SJ3501 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) = -50V.
  • ID =-130 mA.
  • RDS(ON) ＜ 10Ω (VGS =-5 V) TraMnOsiSsFtoErsT P-Channel MOSFET 2SJ3501 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 U nit: m m 0.15±0.05 0.55 (REF. ) 0.8±0.1 +0.15 1.6 -0.15 0.36±0.1 3 Drain - 1 Gate Source 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA = 25°C Pulsed Dr.

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SMD Type ■ Features ● VDS (V) = -50V ● ID =-130 mA ● RDS(ON) ＜ 10Ω (VGS =-5 V) TraMnOsiSsFtoErsT P-Channel MOSFET 2SJ3501 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 +0.15 1.6 -0.15 0.36±0.1 3 Drain - 1 Gate Source 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA = 25°C Pulsed Drain Current (tp ≤ 10 μs) Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -50 ±20 -130 -520 150 833 150 -55 to 150 Unit V mA mW ℃/W ℃ www.kexin.com.