2SJ517
2SJ517 is Silicon P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =- 4V, ID =- 1A)
- Low drive current
- High speed switching
- 2.5V gate drive devices.
Outline
UPAK
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings
- 20 ±10
- 2
- 4
- 2 1 150
- 55 to +150
Unit V V A A A W °C °C
1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 20 ±10
- -
- 0.5
- - 1.8
- -
- -
- -
- -
- Typ
- -
- -
- 0.18 0.27 3.0 320 190 90 14 75 90 90
- 0.95 70 Max
- -
- 10 ±10
- 1.5 0.24 0.43
- -...
