2SJ587 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 m A) R DS = 15 typ. (VGS = -2.5 V , ID = -10 m A) - 2.5 V gate drive device. - Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -20 ±10 -50 -200 -50 100 150 - 55 to +150 Unit V V m A m A m A m W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x 20 x0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -20 ±10 - - -0.8 - - 32.5 - - - - - - - Typ - - - - - 4.1 6.0 50 13 10 1.8 22 48 50 60 Max - - ±5 -1 -1.8 5.0 8.5 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = -100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±8 V, VDS = 0 VDS = -20 V, VGS = 0 I D = -10µA, VDS = -5 V ID = -25 m A,VGS = -4 V Note 3 ID = -10 m A,VGS = -2.5 V Note 3 ID = -25 m A, V DS = -10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = -10 V VGS = 0 f = 1 MHz I D = -25 m A, VGS = -4 V RL = 400 Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is DP t d(on) tr t d(off) tf Main Characteristics Power vs.Temperature Derating 200 - Pch (m...