2SJ588 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 m A) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 m A) - 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note1 Ratings -30 ±20 -100 -400 -100 300 150 - 55 to +150 Unit V V m A m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 ±20 - - -1.3 - - 68 - - - - - - - Typ - - - - - 2.8 5.7 105 25 20 8 10 15 40 45 Max - - ±5 -1 -2.3 3.3 7.9 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = -100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10µA, VDS = -5 V ID = -50 m A,VGS = -10 V Note 2 ID = -50 m A,VGS = -4 V Note 2 ID = -50 m A, V DS = -10 V Note 2 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = -10 V VGS = 0 f = 1 MHz I D = -50 m A, VGS = -10 V RL = 200Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: t d(on) tr t d(off) tf 2. Pulse test See characteristics curves of 2SJ575 Main Characteristics Maximum Safe Operation Area -5 -2 -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01...