2SK2202 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 120 ±20 7 14 7 20 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 120 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0 - - - - - - - - - Typ - - - - - 0.3 0.35 5.0 420 140 35 9 50 140 65 1.35 320 Max - - ±10 250 2.0 0.4 0.55 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, di F / dt = 50 A / µs Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 4 A VGS = 10 V- 1 ID = 4 A VGS = 4 V- 1 ID = 4 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Power vs. Temperature Derating 40 Pch (W) I D (A) 20 10 5 2 1 0.5 0.2 0.1 0 50 100 150 Tc (°C) 200 2 Case Temperature Ta = 25 °C 5 10 20 50 100 200 Drain to Source Voltage V DS (V) Maximum Safe...