2SK2738 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 15 mΩ typ - High speed switching - 4V gate drive device can be driven from 5V source Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)- 3 3 2 1 Ratings 60 ±20 40 160 40 40 137 30 150 - 55 to +150 Unit V V A A A A m J W °C °C Body to drain diode reverse drain current I DR Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature I AP - EAR- Pch- Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 60 ±20 - - 1.5 - - 20 - - - - - - - - - Typ - - - - - 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max - - ±10 10 2.5 20 40 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V V I F = 40A, VGS = 0 di F/ dt = 50A/µs I F = 40A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1m A, VDS = 10V I D = 20A, VGS = 10V- 1 I D = 20A, VGS = 4V- 1 I D = 20A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz I D = 20A, VGS = 10V RL = 1.5Ω Main Characteristics Power vs. Temperature Derating 40 Pch (W) 1000 I D (A) 300 100 30 Drain Current 20 10 3 1 0.3 0 50 100 150 Tc (°C)...