2SK2933 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.040Ω typ. - 4V gate drive devices. - High speed switching Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 15 60 15 15 19 25 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 - - 1.5 - - 7 - - - - - - - - - Typ - - - - - 0.040 0.060 11 500 260 110 10 80 100 110 0.9 50 Max - - 10 ±10 2.5 0.052 0.105 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 15A, VGS = 0 I F = 15A, VGS = 0 di F/ dt =50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 8A, VGS = 10V Note4 I D = 8A, VGS = 4V Note4 I D = 8A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 8A RL = 3.75Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 4. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Main Characteristics Power vs. Temperature Derating 40 1000...