2SK3081 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 10mΩ typ. - 4V gate drive devices. - High speed switching Outline TO- 220AB 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 45 180 45 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 75 150 - 55 to +150 Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 - - 1.0 - - 20 - - - - - - - - - Typ - - - - - 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max - - 10 ±10 2.0 14 25 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 di F/ dt =50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 20A, VGS = 10V Note3 I D = 20A, VGS = 4V Note3 I D = 20A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, I D = 20A RL = 0.5 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body- drain diode forward voltage VDF Body- drain diode reverse recovery time Note: 3. Pulse test t rr Main Characteristics Power vs. Temperature Derating 100...