2SK3140 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 6 mΩ typ. - Low drive current - 4 V gate drive device can be driven from 5 V source Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Note 3 Note 3 Note 1 Ratings 60 ±20 60 240 60 50 214 35 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Note 2 Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 - - 1.0 - - |yfs| Ciss Coss 45 - - - - - - - - - - - - Typ - - - - 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max - ±0.1 10 2.5 7.5 12 - - - - - - - - - - - - - Unit V µA µA V mΩ mΩ S p F p F p F nc nc nc ns ns ns ns V ns I F = 60 A, VGS = 0 I F = 60 A, VGS = 0 di F/ dt = 50 A/ µs Test Conditions I D = 10 m A, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 m A, VDS = 10 V Note 1 I D = 30 A, VGS = 10 V Note 1 I D = 30 A, VGS = 4 V Note 1 I D = 30 A, VDS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V I D = 60 A VGS = 10 V, ID = 30 A RL = 1Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t...