2SK3290 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 m A) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 m A) - 4 V gate drive device. - Small package (MPAK) Outline MPAK 3 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 500 2 500 400 150 - 55 to +150 Unit V V m A A m A m W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 - - 1.3 - - 350 - - - - - - - Typ - - - - - 0.455 0.9 540 5 30 2 240 1700 850 1300 Max - - ±5 -1 2.3 0.525 1.25 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10µA, VDS = 5 V ID = 250 m A,VGS = 10 V Note 3 ID = 100 m A,VGS = 4 V Note 3 ID = 250 m A, VDS = 10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = 10 V VGS = 0 f = 1 MHz I D = 250 m A, VGS = 10 V RL = 40Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is BN t d(on) tr t d(off) tf Main Characteristics Power vs. Temperature Derating 800 - Pch (m W) 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.005...