3SK186 Datasheet | Hitachi Semiconductor

Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 - 55 to +125 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS Min 12 ±10 ±10 - - +0.5 +0.5 0 15 - - - 16 - Typ - - - - - - - - - 1.7 1.0 0.017 19 3.0 Max - - - ±100 ±100 - 0.8 - 0.8 4 - 2.2 1.4 0.03 - 4.5 Unit V V V n A n A V V m A m S p F p F p F d B d B VDS = 4 V, VG2S = 3V, I D = 10 m A, f = 900 MHz Test conditions VG1S = VG2S = - 5 V, I D = 200 µA I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, VG2S = VDS = 0 VG2S = ±8 V, VG1S = VDS = 0 VDS = 6 V, VG2S = 3V, I D = 100 µA VDS = 6 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, VG1S = 0 VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 1 k Hz VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “FI- ”. I DSS |yfs| Ciss Coss Crss PG NF Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (m W) 300 Typical Output Characteristics 20 1.6 1.4 1.2 =1 P ch 50 m W Drain Current ID (m A) VG2S = 3 V...