3SK295 Datasheet | Hitachi Semiconductor

Features - Low noise figure. NF = 2.0 d B typ. at f = 900 MHz - Capable of low voltage operation Outline MPAK-4 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 - 55 to +150 Unit V V V m A m W °C °C Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 ±8 ±8 - - 0.5 - 0.5 0 16 1.2 0.6 - 16 - Typ - - - - - - - - 20.8 1.5 0.9 0.01 19.5 2.0 Max - - - ±100 ±100 10 +0.5 +1.0 - 2.2 1.2 0.03 - 3 Unit V V V n A n A m A V V m S p F p F p F d B d B VDS = 4 V, VG2S = 3V, I D = 10 m A, f = 900 MHz Test conditions I D = 200 µA , VG1S = - 3 V, VG2S = - 3 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.5V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 µA VDS = 10 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 1 k Hz VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “ZQ- ” |yfs| Ciss Coss Crss PG NF Maximum Channel Power Dissipation Curve Pch (m W) 200 (m A) Typical Output Characteristics 20 VG2S = 3 V 16 1.0 V ID 12 0.8 V 8 0.6 V 4 VG1S = 0.4 V 2 4 6 8 10 Drain to source voltage VDS (V) 100 Drain current 1.2 V Pulse test Channel Power...