HAF2011 Datasheet | Hitachi Semiconductor

Features This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. - - - - Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built- in the over temperature shut- down circuit Latch type shut- down operation (Need 0 voltage recovery) Outline LDPAK 4 G Gate resistor Tempe- rature Sencing Circuit Latch Circuit Gate Shut- down Circuit 1 1 1. Gate 2. Drain 3. Source 4. Drain HAF2011(L),HAF2011(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 60 16 - 2.5 40 80 40 50 150 - 55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate non shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min 3.5 - - - - - - - 3.5 Typ - - - - - 0.8 0.35 175 - Max - 1.2 100 50 1 - - - 12 Unit V V µA µA µA m A m A °C V Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions HAF2011(L),HAF2011(S) Electrical Characteristics (Ta =...