HD155121F Datasheet | Hitachi Semiconductor

Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier, and an IQ demodulator for the receiver, and an IQ modulator and offset PLL for the transmitter. Also, on chip are dividers for the phase splitter. Moreover the HD155121F includes control circuits to implement power saving modes. These functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD package. Hence the HD155121F can form a small size transceiver handset for dual band by adding a dual PLL frequency synthesizer IC, power amplifiers and some external ponents. The HD155121F is fabricated using a 0.6 µm double-polysilicon Bi-CMOS process. Functions Receiver(Rx) - - - - - Low Noise Amplifier (LNA) bias circuit First mixer IF amplifier and second mixer Programmable Gain Amplifier (PGA) IQ demodulator with 90 degree phase splitter Transmitter(Tx) - IQ modulator with 90 degree phase splitter - Offset PLL  Down converter  Phase parator  TXVCO driver Others - IF dividers - Power saving control circuit - IFVCO Features - Highly integrated RF processing for hand-portables - Operating supply voltage  VCC : 2.7 to 3.6 V  Phase parator and TXVCO driver circuit : 2.7 to 5.25 V - Current consumption  Rx mode (GSM) : 53 m A + LNA current  Rx mode (PCN) : 52 m A + LNA current  Tx mode (GSM) : 36 m A  Tx mode (PCN) : 37 m A  Idle mode :1 µA - Operating temperature : - 20 to +75 degree - LQFP 48pin SMD (Low Profile Quad Flat Package) - Wide operating frequencies  Rx RF GSM : 925 - 960 MHz PCN : 1805 - 1880 MHz 1st IF : 225 MHz 2nd IF : 45 MHz  Tx RF GSM : 880 - 915 MHz PCN : 1710 - 1785 MHz IF GSM : 270 MHz PCN : 135 MHz - Offset PLL architecture for Transmitter - High dynamic range Programmable Gain Amplifier (PGA) Pin Arrangement MIX1OUTB POONRX2...