HN29WB800 Datasheet | Hitachi Semiconductor

Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic Program/Erase without plex external control. HN29WT800 Series, HN29WB800 Series enable the low power and high performance systems such as mobile, personal puting and munication products. Features - On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V - Access time: 80/100/120 ns (max) - Low power dissipation:  ICC = 30 m A (max) (Read)  ICC = 200 µA (max) (Standby)  ICC = 40 m A (max) (Program)  ICC = 40 m A (max) (Erase)  ICC = 1 µA (typ) (Deep powerdown) - Automatic page programming:  Programming time: 25 ms (typ)  Program unit: 128 word - Automatic erase:  Erase time: 50 ms (typ)  Erase unit: Boot block; 8-kword/16-kbyte × 1 Parameter block; 4-kword/8-kbyte × 2 Main block; 16-kword/32-kbyte × 1 32-kword/64-kbyte × 15 This product is patible with M5M29FB/T800xx by Ltd. Mitsubishi. HN29WT800 Series, HN29WB800 Series - Block boot:  HN29WT800 Series: Top boot  HN29WB800 Series: Bottom boot - Program/Erase endurance  10,000 cycles - Other functions:  Software mand control  Selective block lock  Program suspend/Resume  Erase suspend/Resume  Status register read - patible with M5M29FB/T800xx by Ltd. Mitsubishi Ordering Information Type No. HN29WT800T-8 HN29WT800T-10 HN29WT800T-12 HN29WB800T-8 HN29WB800T-10 HN29WB800T-12 HN29WT800R-8 HN29WT800R-10 HN29WT800R-12 HN29WB800R-8 HN29WB800R-10 HN29WB800R-12 Access time 80 ns 100 ns 120 ns 80 ns 100 ns 120 ns 80 ns 100 ns 120 ns 80 ns 100 ns 120 ns 12 × 20.0 mm 2 48-pin plastic TSOP I (Reverse) (TFP-48DR) Package 12 × 20.0 mm 2 48-pin plastic TSOP I (TFP-48D) HN29WT800 Series, HN29WB800 Series Pin Arrangement HN29WT800T Series HN29WB800T Series A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC WP RDY/Busy A18 A17...