• Part: HSB124S
  • Description: Silicon Epitaxial Planar Diode for High Speed Switching
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 23.43 KB
Download HSB124S Datasheet PDF
Hitachi Semiconductor
HSB124S
HSB124S is Silicon Epitaxial Planar Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features - Low reverse current.(I R= 0.01 µAmax) - CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB124S Laser Mark A1 Package Code CMPAK Outline 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Note: Symbol VRM VR I FM - 1 - 2 Value 85 80 300 4 100 125 -55 to +125 Unit V V m A A m A °C °C I FSM I O- 1 Tj Tstg 1. Two device total. 2. Value at duration of 1 µsec, two device total. Electrical Characteristics (Ta = 25°C) - 1 Item Forward voltage Reverse current Capacitance Reverse recovery time Note: Symbol VF IR C t rr Min - - - - Typ - - - - Max 1.2 0.01 4.0 100 Unit V µA p F ns Test Condition I F = 100 m A VR = 80V VR = 0V, f = 1 MHz I F = 10 m A, VR = 6V, RL = 50Ω 1. Per one device. Main Characteristic -2 -3 -9 10 10 Forward current IF 10 10 10 10 10 10 10 -5 -6 Reverse current I R (A) 0 0.2 0.4 0.6 0.8...