HSB124S
HSB124S is Silicon Epitaxial Planar Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Low reverse current.(I R= 0.01 µAmax)
- CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB124S Laser Mark A1 Package Code CMPAK
Outline
1 1 Cathode 2 Anode 3 Cathode Anode
(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Note: Symbol VRM VR I FM
- 1
- 2
Value 85 80 300 4 100 125 -55 to +125
Unit V V m A A m A °C °C
I FSM I O- 1 Tj
Tstg
1. Two device total. 2. Value at duration of 1 µsec, two device total.
Electrical Characteristics (Ta = 25°C)
- 1
Item Forward voltage Reverse current Capacitance Reverse recovery time Note: Symbol VF IR C t rr Min
- -
- - Typ
- -
- - Max 1.2 0.01 4.0 100 Unit V µA p F ns Test Condition I F = 100 m A VR = 80V VR = 0V, f = 1 MHz I F = 10 m A, VR = 6V, RL = 50Ω
1. Per one device.
Main Characteristic
-2 -3 -9
10 10
Forward current IF
10 10 10 10 10 10 10
-5 -6
Reverse current I R (A)
0 0.2 0.4 0.6 0.8...