HSB276S
HSB276S is Silicon Schottky Barrier Diode for Balanced Mixer manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- HSB276S which is interconnected in series configuration is designed for balanced mixer use.
- CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB276S Laser Mark C2 Package Code CMPAK
Outline
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note 1. Per one device Symbol VR IO
- 1
Value 3 30 125 -55 to +125
Unit V m A °C °C
Tj Tstg
Electrical Characteristics (Ta = 25°C)
- 2
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability Note Note
- 1
Symbol Min VR IR IF C ∆C 3 35 30
Typ
Max 50 0.90 0.10
Unit V µA m A p F p F V
Test Condition I R = 1 m A VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200p F , Both forward and reverse direction 1 pulse.
1. Failure criterion ; IR ≥ 100µA at VR =0.5 V 2. Per one device
Main Characteristic
-2
-1
-2
-3
Forward current I F (A)
Reverse current IR (A)
0.4 0.6 0.8...
