HSB278S
HSB278S is Silicon Schottky Barrier Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Low forward voltage, Low capacitance.
- CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB278S Laser Mark S2 Package Code CMPAK
Outline
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Peak forward current Average rectified current Junction temperature Storage temperature Notes : 1. 10 msec sine wave 1 pulse 2. Per one device. Symbol VRRM VR Value 30 30
1 2
Unit V V m A m A m A °C °C
IFSM
- - IFM
- IO
- Tj Tstg
2 2
200 150 30 125
- 55 to +125
Electrical Characteristics (Ta = 25°C)
- 1
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance ESD-Capability
- 1
Min
- -
- - 100
Typ
- -
- -
- Max 0.30 0.95 700 1.50
- Unit V
Test Condition I F = 1 m A I F = 30 m A
IR C
- n A p F V
VR = 10 V VR = 1 V, f = 1 MHz C = 200 p F, RL = 0 Ω, Both forward and reverse direction 1 pulse.
Notes : 1. Per one device. 2. Failure criterion ; IR > 1.4 µA at V R = 10 V
Main...
