HSB83YP
HSB83YP is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features
- High reverse voltage. (VR=250V)
- CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting.
Ordering Information
Type No. HSB83YP Laser Mark F7 Package Code CMPAK-4
Outline
4 3
(Top View)
1 2 3 4 Anode Anode Cathode Cathode
Absolute Maximum Ratings (Ta = 25°C)
- 2
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Note Symbol VRM VR I FM I FSM IO Tj Tstg
- 1
Value 300 250 300 2 100 125 -55Å`+125
Unit V V m A A m A °C °C
1. Value at duration of 10msec. 2. Two device total.
Electrical Characteristics (Ta = 25°C)
- 1
Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time Note C t rr Min
- -
- -
- Typ
- -
- -
- Max 1.2 0.2 100 3.0 100 p F ns Unit V µA Test Condition I F = 100 m A VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 m A, Irr = 3m A, RL= 100Ω
1. Per one device.
Main Characteristic
10 10
-2
-5
-3 -6
10 10
-4
-5
Reverse current I R (A)
0.6 0.8
Forward current...