• Part: HSB83YP
  • Description: Silicon Epitaxial Planar Diode for High Voltage Switching
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 23.59 KB
Download HSB83YP Datasheet PDF
Hitachi Semiconductor
HSB83YP
HSB83YP is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features - High reverse voltage. (VR=250V) - CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting. Ordering Information Type No. HSB83YP Laser Mark F7 Package Code CMPAK-4 Outline 4 3 (Top View) 1 2 3 4 Anode Anode Cathode Cathode Absolute Maximum Ratings (Ta = 25°C) - 2 Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Note Symbol VRM VR I FM I FSM IO Tj Tstg - 1 Value 300 250 300 2 100 125 -55Å`+125 Unit V V m A A m A °C °C 1. Value at duration of 10msec. 2. Two device total. Electrical Characteristics (Ta = 25°C) - 1 Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time Note C t rr Min - - - - - Typ - - - - - Max 1.2 0.2 100 3.0 100 p F ns Unit V µA Test Condition I F = 100 m A VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 m A, Irr = 3m A, RL= 100Ω 1. Per one device. Main Characteristic 10 10 -2 -5 -3 -6 10 10 -4 -5 Reverse current I R (A) 0.6 0.8 Forward current...