HSC276A
HSC276A is Silicon Schottky Barrier Diode for Mixer manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC276A Laser Mark S5 Package Code UFP
Outline
Cathode mark Mark 1
S5
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 -55 to +125 Unit V V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability
- 1
Symbol VR IR IF C
- Min 3
- 35
- 30
Typ
- -
- -
- Max
- 50
- 0.85
- Unit V µA m A p F V
Test Condition I R = 1 m A VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz C=200p F , R = 0 Ω , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR ≥ 100 µA at V R =0.5 V
Main Characteristic
-1
-2
(A)
-2
Reverse current I R (A)
-3
Forward current...
