• Part: HSC277
  • Description: Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 26.66 KB
Download HSC277 Datasheet PDF
Hitachi Semiconductor
HSC277
HSC277 is Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch manufactured by Hitachi Semiconductor.
Features - Low forward resistance. (rf = 0.7 max) - Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Code UFP Outline Cathode mark 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj Pd Topr Tstg Value 35 125 150 - 20 to +60 - 45 to +125 Unit V °C m W °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol VR IR VF C rf Min 35 - - - - Typ - - - - - Max - 50 1.0 1.2 0.7 Unit V µA V p F Ω Test Condition I R = 10µA VR = 25V I F = 10m A VR = 6V, f = 1MHz I F = 2m A, f = 100MHz - 2 10 - 3 Forward current I F (A) 10 - 4 - 5 10 10 - 6 10- 7 10 - 8 10 - 9 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage - 6 10 Reverse current I R...