• Part: HSU277
  • Description: Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 27.95 KB
Download HSU277 Datasheet PDF
Hitachi Semiconductor
HSU277
HSU277 is Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch manufactured by Hitachi Semiconductor.
Features - Low forward resistance. (rf = 0.7 Ω max) - Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. HSU277 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature Symbol VR Pd Tj Tstg Topr Value 35 150 125 -45 to +125 -20 to +60 Unit V m W °C °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Forward voltage Reverse current Capacitance Forward resistance Symbol VR VF IR C rf Min 35 - - - - Typ - - - - - Max - 1.0 50 1.2 0.7 Unit V V n A p F Ω Test Condition I R = 10µA I F = 10 m A VR = 25V VR = 6V, f = 1 MHz I F = 2 m A, f = 100 MHz Main Characteristic 10 -2 10 -3 Reverse current I R (A) Forward current I F (A) -6 10 10 -7 10 -4 -5 10 -8 10 10 -9 10 10 -6 -10 10-7 10 -8 10 -9 10 10 -11 -12 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F...