K2959 Datasheet | Hitachi Semiconductor

Features - Low on-resistance RDS(on) = 7mΩ typ. - 4V gate drive devices. - High speed switching Outline TO- 220AB ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 50 200 50 75 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current I DSS Gate to source leak current I GSS Gate to source cutoff voltage VGS(off) Static drain to source on state...